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| FDS8958A January 2001 FDS8958A Dual N & P-Channel PowerTrench MOSFET General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. * * Features * Q1: N-Channel RDS(on) = 0.028 @ VGS = 10V RDS(on) = 0.040 @ VGS = 4.5V * Q2: P-Channel RDS(on) = 0.052 @ VGS = -10V RDS(on) = 0.080 @ VGS = -4.5V Fast switching speed High power and handling capability in a widely used surface mount package 7.0A, 30V -5A, -30V D1 D D1 D DD2 D2 D 5 6 Q2 4 3 Q1 SO-8 Pin 1 SO-8 G1 S1 S G2 S2 G 7 8 2 1 S S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage TA = 25C unless otherwise noted Parameter Q1 30 (Note 1a) Q2 30 20 -5 -20 2 1.6 1 0.9 -55 to +150 Units V V A W - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation Drain Current 20 7 20 (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range C Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 C/W C/W Package Marking and Ordering Information Device Marking FDS8958A 2001 Fairchild Semiconductor International Device FDS8958A Reel Size 13" Tape width 12mm Quantity 2500 units FDS8958A Rev D(W) FDS8958A Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSSF IGSSR TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Test Conditions VGS = 0 V, ID = 250 A VGS = 0 V, ID = -250 A ID = 250 A, Referenced to 25C ID = -250 A, Referenced to 25C VDS = 24 V, VGS = 0 V VDS = -24 V, VGS = 0 V VGS = 20 V, VDS = 0 V Type Min Typ Max Units Q1 Q2 Q1 Q2 Q1 Q2 All All 30 -30 25 -22 1 -1 100 -100 V mV/C A nA nA Off Characteristics Gate-Body Leakage, Reverse VGS = -20 V, VDS = 0 V (Note 2) On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID(on) gFS On-State Drain Current Forward Transconductance VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A ID = 250 A, Referenced to 25C ID = -250 A, Referenced to 25C VGS = 10 V, ID = 7 A VGS = 10 V, ID = 7 A, TJ = 125C VGS = 4.5 V, ID = 6 A VGS = -10 V, ID = -5 A VGS = -10 V, ID = -5 A, TJ = 125C VGS = -4.5 V, ID = -4 A VGS = 10 V, VDS = 5 V VGS = -10 V, VDS = -5 V VDS = 5 V, ID = 7 A VDS = -5 V, ID =-5 A Q1 VDS = 10 V, VGS = 0 V, f = 1.0 MHz Q1 Q2 Q1 Q2 Q1 1 -1 1.6 -1.7 -4.3 4 21 32 27 41 58 58 3 -3 V mV/C 28 42 40 52 78 80 m Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 20 -20 19 11 789 690 173 306 66 77 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Q2 Reverse Transfer Capacitance VDS = -10 V, VGS = 0 V, f = 1.0 MHz pF pF pF FDS8958A Rev D(W) Electrical Characteristics Symbol Parameter (continued) TA = 25C unless otherwise noted Test Conditions (Note 2) Type Min Typ Max Units Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Q1 VDD = 10 V, ID = 1 A, VGS = 10V, RGEN = 6 Q2 VDD = -10 V, ID = -1 A, VGS = -10V, RGEN = 6 Q1 VDS = 15 V, ID = 7 A, VGS = 10 V Q2 VDS = -15 V, ID = -5 A,VGS = -10 V Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 2.2 6.7 7.5 9.7 11.8 19.8 3.7 12.3 16 14 2.5 2.4 2.6 4.8 4.4 13.4 15 19.4 21.3 35.6 7.4 22.2 26 23 ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A Voltage VGS = 0 V, IS = -1.3 A (Note 2) (Note 2) 0.74 -0.76 1.3 -1.3 1.2 -1.2 A V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 78/W when mounted on a 2 0.5 in pad of 2 oz copper b) 125/W when mounted on a .02 in2 pad of 2 oz copper c) 135/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDS8958A Rev D(W) FDS8958A Typical Characteristics: Q1 30 VGS = 10V 7.0V 5.0V 20 4.5V 4.0V 3.5V 2.4 2.2 2.0 1.8 1.6 3.0V 1.4 1.2 2.5V 1.0 0.8 0 1 2 3 4 5 0 6 12 18 24 30 3.5V 4.0V 4.5V 5.0V 6.0V 7.0V 10V VGS = 3.0V 10 0 VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.09 1.9 ID = 7A VGS = 10V 0.08 0.07 0.06 0.05 TA = 125 C o ID = 7A 1.6 1.3 1.0 0.04 0.03 0.02 TA = 25 C o 0.7 0.4 -50 -25 0 25 50 75 100 o 0.01 125 150 2 4 6 8 10 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 30 VDS = 10V 25 20 125 C 15 o o Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V TA = -55 C 25 C o 10 TA = 125 C 1 25 C 0.1 o o 10 0.01 5 0 1 2 3 4 5 0.001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -55 C o VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS8958A Rev D(W) FDS8958A Typical Characteristics: Q1 10 ID =7A 8 15V 6 VDS = 5V 10V 1200 f = 1MHz VGS = 0 V 900 CISS 600 4 300 2 COSS CRSS 0 0 4 8 Qg, GATE CHARGE (nC) 12 16 0 0.0 5.0 10.0 15.0 20.0 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 RDS(ON) LIMIT 100s 1ms 10ms 100ms 1 VGS = 10V SINGLE PULSE RJA = 135 C/W TA = 25 C 0.01 0.1 1 10 100 0 o o Figure 8. Capacitance Characteristics. 50 SINGLE PULSE RJA = 135C/W TA = 25C 40 10 30 1s 10s DC 20 0.1 10 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. FDS8958A Rev D(W) FDS8958A Typical Characteristics Q2 30 VGS = -10.0V 25 20 15 10 5 0 0 1 2 3 4 5 -3.5V -7.0V -5.0V -6.0V -4.0V 2.5 VGS = -3.5V 2 -4.0V -4.5V 1.5 -5.0V -6.0V -7.0V 1 -3.0V -10.0V 0.5 0 6 12 18 24 30 -ID, DRAIN CURRENT (A) -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 0.2 1.6 ID = -5A VGS = -10V ID = -5A 1.4 0.15 1.2 0.1 1.0 0.05 0.8 TA = 125 C TA = 25 C o o 0.6 -50 -25 0 25 50 75 100 o 0 125 150 2 4 6 8 10 TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 13. On-Resistance Variation with Temperature. 30 VDS = -10V 25 20 15 125 C 10 5 0 1.5 2.5 3.5 4.5 5.5 o Figure 14. On-Resistance Variation with Gate-to-Source Voltage. 100 TA = -55 C 10 25 C 1 o o VGS = 0V TA = 125 C 25 C o o 0.1 -55 C o 0.01 0.001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS8958A Rev D(W) FDS8958A Typical Characteristics Q2 10 ID = -5.3A VDS = -5V 8 -15V 6 -10V 1000 f = 1 MHz VGS = 0 V CISS 800 600 4 400 COSS 2 200 CRSS 0 0 5 10 15 0 5 10 15 20 Qg, GATE CHARGE (nC) 0 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 17. Gate Charge Characteristics. 100 RDS(ON) LIMIT 10 1ms 100 s 10ms 100ms 1s 1 DC 0.1 VGS = -10V SINGLE PULSE RJA = 135 C/W TA = 25 C 0.01 0.1 1 10 100 0 o o Figure 18. Capacitance Characteristics. 50 SINGLE PULSE RJA = 135C/W TA = 25C 40 30 10s 20 10 0.001 0.01 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum Power Dissipation. 1 D = 0.5 0.2 RJA(t) = r(t) + RJA 0.1 0.05 0.02 0.01 SINGLE PULSE 0.1 RJA = 135 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 o 0.01 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS8958A Rev D(W) SOIC-8 Tape and Reel Data SOIC(8lds) Packaging Configuration: Figure 1.0 Packaging Description: EL ECT ROST AT IC SEN SIT IVE DEVICES DO NO T SHI P OR STO RE N EAR ST RO NG EL ECT ROST AT IC EL ECT RO M AGN ETI C, M AG NET IC O R R ADIO ACT IVE FI ELD S TNR D ATE PT NUMB ER PEEL STREN GTH MIN ___ __ ____ __ ___gms MAX ___ ___ ___ ___ _ gms Antistatic Cover Tape ESD Label SOIC-8 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 2,500 units per 13" or 330cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 units per 7" or 177cm diameter reel. This and some other options are further described in the Packaging Information table. These full reels are individually barcode labeled and placed inside a standard intermediate box (illustrated in figure 1.0) made of recyclable corrugated brown paper. One box contains two reels maximum. And these boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped. Static Dissipative Embossed Carrier Tape F63TNR Label Customized Label F852 NDS 9959 F852 NDS 9959 F852 NDS 9959 F852 NDS 9959 F852 NDS 9959 SOIC (8lds) Packaging Information Pin 1 D84Z TNR 500 Packaging Option Packaging type Qty per Reel/Tube/Bag Standard (no flow code) TNR 2,500 L86Z Rail/Tube 95 F011 TNR 4,000 SOIC-8 Unit Orientation Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg) 13" Dia 343x64x343 5,000 0.0774 0.6060 530x130x83 30,000 0.0774 - 13" Dia 343x64x343 8,000 0.0774 0.9696 7" Dia 184x187x47 1,000 0.0774 0.1182 Note/Comments 343mm x 342mm x 64mm Standard Intermediate box ESD Label F63TNR Label sample LOT: CBVK741B019 FSID: FDS9953A QTY: 2500 SPEC: F63TNLabel F63TN Label ESD Label (F63TNR)3 D/C1: D9842 D/C2: QTY1: QTY2: SPEC REV: CPN: N/F: F SOIC(8lds) Tape Leader and Trailer Configuration: Figure 2.0 Carrier Tape Cover Tape Components Trailer Tape 640mm minimum or 80 empty pockets Leader Tape 1680mm minimum or 210 empty pockets (c)2000 Fairchild Semiconductor International July 1999, Rev. B SOIC-8 Tape and Reel Data, continued SOIC(8lds) Embossed Carrier Tape Configuration: Figure 3.0 T E1 P0 D0 F K0 Wc B0 E2 W Tc A0 P1 D1 User Direction of Feed Dimensions are in millimeter Pkg type SOIC(8lds) (12mm) A0 6.50 +/-0.10 B0 5.30 +/-0.10 W 12.0 +/-0.3 D0 1.55 +/-0.05 D1 1.60 +/-0.10 E1 1.75 +/-0.10 E2 10.25 min F 5.50 +/-0.05 P1 8.0 +/-0.1 P0 4.0 +/-0.1 K0 2.1 +/-0.10 T 0.450 +/0.150 Wc 9.2 +/-0.3 Tc 0.06 +/-0.02 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). 20 deg maximum Typical component cavity center line 0.5mm maximum B0 20 deg maximum component rotation 0.5mm maximum Sketch A (Side or Front Sectional View) Component Rotation A0 Sketch B (Top View) Typical component center line Sketch C (Top View) Component lateral movement SOIC(8lds) Reel Configuration: Figure 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max Dim N See detail AA 7" Diameter Option B Min Dim C See detail AA W3 Dim D min 13" Diameter Option W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size 12mm Reel Option 7" Dia Dim A 7.00 177.8 13.00 330 Dim B 0.059 1.5 0.059 1.5 Dim C 512 +0.020/-0.008 13 +0.5/-0.2 512 +0.020/-0.008 13 +0.5/-0.2 Dim D 0.795 20.2 0.795 20.2 Dim N 2.165 55 7.00 178 Dim W1 0.488 +0.078/-0.000 12.4 +2/0 0.488 +0.078/-0.000 12.4 +2/0 Dim W2 0.724 18.4 0.724 18.4 Dim W3 (LSL-USL) 0.469 - 0.606 11.9 - 15.4 0.469 - 0.606 11.9 - 15.4 12mm 13" Dia (c) 1998 Fairchild Semiconductor Corporation July 1999, Rev. B SOIC-8 Package Dimensions SOIC-8 (FS PKG Code S1) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0774 9 (c)2000 Fairchild Semiconductor International September 1998, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST DISCLAIMER FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G |
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